| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2N6276 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 1112 |
2N6277 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 1113 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
| 1114 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
| 1115 |
2N6421 |
Trans GP BJT PNP 250V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 1116 |
2N6463 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
| 1117 |
2N6464 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
| 1118 |
2N6497 |
Trans GP BJT NPN 250V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 1119 |
2N6497 |
Power 5A 250V Discrete NPN |
ON Semiconductor |
| 1120 |
2N6504 |
Thyristor SCR 50V 250A 3-Pin(3+Tab) TO-220AB Bulk |
New Jersey Semiconductor |
| 1121 |
2N6511 |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1122 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 1123 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1124 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1125 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1126 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1127 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 1128 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 1129 |
2N6557 |
Trans GP BJT NPN 250V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 1130 |
2N686 |
250V 16A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 1131 |
2N686 |
Thyristor SCR 250V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 1132 |
2N686A |
Thyristor SCR 250V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 1133 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 1134 |
2RI250 |
POWER DIODE MODULE |
Fuji Electric |
| 1135 |
2RI250E |
POWER DIODE MODULE |
Fuji Electric |
| 1136 |
2SA1001 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
| 1137 |
2SA1002 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
| 1138 |
2SA1003 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
| 1139 |
2SA1007 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
| 1140 |
2SA1250 |
Trans GP BJT PNP 20V 0.03A 3-Pin M-A1 |
New Jersey Semiconductor |
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