| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
2SA1250 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
| 1142 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 1143 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 1144 |
2SB1250 |
For power amplification |
Panasonic |
| 1145 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 1146 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 1147 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1148 |
2SC2502 |
POWER TRANSISTORS(6.0A,400V,50W) |
MOSPEC Semiconductor |
| 1149 |
2SC2502 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 1150 |
2SC2504 |
100W T10V |
Shindengen |
| 1151 |
2SC2508 |
Silicon NPN epitaxial planar VHF band power transistor 27W |
TOSHIBA |
| 1152 |
2SC2509 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications |
TOSHIBA |
| 1153 |
2SC3250 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 1154 |
2SC4250 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF Mixer Applications |
TOSHIBA |
| 1155 |
2SC4448 |
Trans GP BJT NPN 250V 0.15A 3-Pin(3+Tab) TO-220NIS |
New Jersey Semiconductor |
| 1156 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
| 1157 |
2SC5250 |
Silicon NPN Triple Diffused Planar |
Hitachi Semiconductor |
| 1158 |
2SC5250 |
Silicon NPN Power Transistors TO-3PFM package |
Savantic |
| 1159 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 1160 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 1161 |
2SC979 |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
| 1162 |
2SC979A |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
| 1163 |
2SD1088 |
POWER TRANSISTORS(6A,250V,30W) |
MOSPEC Semiconductor |
| 1164 |
2SD1250 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 1165 |
2SD1250A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 1166 |
2SD1410 |
6A; 25W; V(ceo): 250V; NPN darlington transistor |
TOSHIBA |
| 1167 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 1168 |
2SD2250 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 1169 |
2SD2500 |
Silicon NPN Power Transistors TO-3P(H)IS package |
Savantic |
| 1170 |
2SD2500 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV |
TOSHIBA |
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