| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
M68AW128ML55ND1E |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1112 |
M68AW128ML55ND1F |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1113 |
M68AW128ML55ND1T |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1114 |
M68AW128ML55ND6 |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1115 |
M68AW128ML55ND6E |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1116 |
M68AW128ML55ND6F |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1117 |
M68AW128ML55ND6T |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1118 |
M68AW256ML55ND1T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1119 |
M68AW256ML55ND6T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1120 |
M68AW256MN55ND1T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1121 |
M68AW256MN55ND6 |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 1122 |
M68AW256MN55ND6T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1123 |
M68AW511AL55NC1T |
4 Mbit (512K x8) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1124 |
M68AW511AL55NC6T |
4 Mbit (512K x8) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1125 |
M68AW511AM55NC1T |
4 Mbit (512K x8) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1126 |
M68AW511AM55NC6T |
4 Mbit (512K x8) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1127 |
M68AW512ML55ND1T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1128 |
M68AW512ML55ND6T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1129 |
M68AW512MN55ND1T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1130 |
M68AW512MN55ND6T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
| 1131 |
M68Z128-55N1 |
5V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable |
ST Microelectronics |
| 1132 |
MAX31855NASA+ |
Cold-Junction Compensated Thermocouple-to-Digital Converter |
MAXIM - Dallas Semiconductor |
| 1133 |
MAX31855NASA+T |
Cold-Junction Compensated Thermocouple-to-Digital Converter |
MAXIM - Dallas Semiconductor |
| 1134 |
MTB55N06Z |
TMOS POWER FET 55 AMPERES 60 VOLTS |
Motorola |
| 1135 |
MTB55N06Z |
Power MOSFET 55 Amps, 60 Volts |
ON Semiconductor |
| 1136 |
MTB55N06Z-D |
Power MOSFET 55 Amps, 60 Volts N-Channel D2PAK |
ON Semiconductor |
| 1137 |
MTM55N08 |
Trans MOSFET N-CH 950V 5A |
New Jersey Semiconductor |
| 1138 |
MTM55N10 |
Trans MOSFET N-CH 950V 5A |
New Jersey Semiconductor |
| 1139 |
MTP55N06 |
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
Motorola |
| 1140 |
MTP55N06Z |
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
Motorola |
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