| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
MTY55N20E |
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
Motorola |
| 1142 |
MTY55N20E |
OBSOLETE - Power MOSFET 55 Amps, 200 Volts |
ON Semiconductor |
| 1143 |
MTY55N20E-D |
Power MOSFET 55 Amps, 200 Volts N-Channel TO-264 |
ON Semiconductor |
| 1144 |
MX29F002TPI-55 |
Access time: 55ns; 2M-bit (256K x 8) CMOS flash memory |
Macronix International |
| 1145 |
MX29F002TTI-55 |
Access time: 55ns; 2M-bit (256K x 8) CMOS flash memory |
Macronix International |
| 1146 |
MX29LV400BXBC-55R |
Access time: 55ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory |
Macronix International |
| 1147 |
MX29LV400TMC-55 |
Access time: 55ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory |
Macronix International |
| 1148 |
NDS355N |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 1149 |
NDS355N |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
National Semiconductor |
| 1150 |
NDS355N_NF40 |
N-Channel Logic Level Enhancement Mode Field Effect Transisitor |
Fairchild Semiconductor |
| 1151 |
NDT455N |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 1152 |
NDT455N |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
| 1153 |
NE555N |
Single Timer |
Fairchild Semiconductor |
| 1154 |
NE555N |
Timers for timing delays and oscillator |
Harris Semiconductor |
| 1155 |
NE555N |
Timer |
Philips |
| 1156 |
NE555N |
GENERAL PURPOSE SINGLE BIPOLAR TIMERS |
SGS Thomson Microelectronics |
| 1157 |
NE555N |
GENERAL PURPOSE SINGLE BIPOLAR TIMERS |
ST Microelectronics |
| 1158 |
NE555N |
Precision timer |
Wing Shing Computer Components |
| 1159 |
NE555NB |
Timer |
Philips |
| 1160 |
NE555ND |
Single timer. |
Fairchild Semiconductor |
| 1161 |
NTD4855N |
NTD4855N T2.6 Final DS |
ON Semiconductor |
| 1162 |
NTD4855N |
NTD4855N T2.6 Final DS |
ON Semiconductor |
| 1163 |
NTMFS4955N |
Power MOSFET 30V N Channel, 48A, SO8FL package |
ON Semiconductor |
| 1164 |
NX8567SA565-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1556.555nm. Frequency 192.60 THz. FC-UPC connector. |
NEC |
| 1165 |
OM55N10NK |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 1166 |
OM55N10SA |
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package |
International Rectifier |
| 1167 |
OM55N10SC |
100V Single N-Channel Hi-Rel MOSFET in a TO-258AA package |
International Rectifier |
| 1168 |
OM55N10SW |
100V Single N-Channel Hi-Rel MOSFET in a D3 package |
International Rectifier |
| 1169 |
OPA355NA/250 |
2.5V, 200MHz GBW, CMOS Single Op Amp With Shutdown |
Texas Instruments |
| 1170 |
OPA355NA/250G4 |
2.5V, 200MHz GBW, CMOS Single Op Amp With Shutdown 6-SOT-23 -40 to 125 |
Texas Instruments |
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