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Datasheets for =10

Datasheets found :: 22125
Page: | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 | 42 |
No. Part Name Description Manufacturer
1111 2N6392 10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
1112 2N6393 10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
1113 2N6515 Ic=500mA, Vce=10V transistor MCC
1114 2N6517 Ic=500mA, Vce=10V transistor MCC
1115 2N6519 Ic=500mA, Vce=10V transistor MCC
1116 2N6520 Ic=500mA, Vce=10V transistor MCC
1117 2N6546 10A power-switching N-P-N transistor. General Electric Solid State
1118 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
1119 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
1120 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
1121 2N6666 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
1122 2N6667 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
1123 2N6668 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
1124 2N6756 100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
1125 2N6764 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package International Rectifier
1126 2N6782 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package International Rectifier
1127 2N6782 100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
1128 2N6788 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package International Rectifier
1129 2N6796 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package International Rectifier
1130 2N683 100V 16A Phase Control SCR in a TO-208AA (TO-48) package International Rectifier
1131 2N6986 100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon Motorola
1132 2N7106 10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch Topaz Semiconductor
1133 2N7107 10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch Topaz Semiconductor
1134 2SC2504 100W T10V Shindengen
1135 2SC33306 10Ampere NPN silicon power transistor MOSPEC Semiconductor
1136 2SC3562 10A; 40W; V(ceo): 400V; NPN transistor. For switching regulation TOSHIBA
1137 2SC3563 10A; 40W; V(ceo): 450V; NPN transistor. For switching regulation TOSHIBA
1138 2SC387AG Silicon NPN epitaxial planar transistor, VHF amplifier, UHF oscillator applications fT=1000MHz TOSHIBA
1139 2SD1684 100V/1.5A Switching Applications SANYO
1140 2SD1684 100V/1.5A Switching Applications SANYO


Datasheets found :: 22125
Page: | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 | 42 |



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