| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
300U100A |
1000V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 1142 |
300U10A |
100V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 1143 |
300UR10A |
100V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 1144 |
302U10A |
100V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 1145 |
302UR10A |
100V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 1146 |
303CNQ100 |
100V 300A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
| 1147 |
30BF10 |
100V 3A Ultra-Fast Discrete Diode in a SMC package |
International Rectifier |
| 1148 |
30BF10TR |
100V 3A Ultra-Fast Discrete Diode in a SMC package |
International Rectifier |
| 1149 |
30BQ100 |
100V 3A Schottky Discrete Diode in a SMC package |
International Rectifier |
| 1150 |
30BQ100TR |
100V 3A Schottky Discrete Diode in a SMC package |
International Rectifier |
| 1151 |
30CPF10 |
1000V Fast Recovery Diode in a TO-247AC package |
International Rectifier |
| 1152 |
30CPQ100 |
100V 30A Schottky Common Cathode Diode in a TO-247AC package |
International Rectifier |
| 1153 |
30CTQ100 |
100V 30A Schottky Common Cathode Diode in a TO-220AB package |
International Rectifier |
| 1154 |
30CTQ100-1 |
100V 30A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
| 1155 |
30CTQ100S |
100V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
| 1156 |
30EPF10 |
1000V Fast Recovery Diode in a TO-247AC (2-Pin) package |
International Rectifier |
| 1157 |
30HFU-100 |
100V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 1158 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1159 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1160 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1161 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1162 |
30WQ10FN |
100V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 1163 |
30WQ10FNTR |
100V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 1164 |
30WQ10FNTRL |
100V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 1165 |
30WQ10FNTRR |
100V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 1166 |
3110 |
1000 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 1167 |
3110F |
1000 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 1168 |
3110UF |
1000 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 1169 |
31DQ10 |
100V 3.3A Schottky Discrete Diode in a DO-201AD package |
International Rectifier |
| 1170 |
31DQ10TR |
100V 3.3A Schottky Discrete Diode in a DO-201AD package |
International Rectifier |
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