| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 1112 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 1113 |
2SC3852 |
Silicon NPN Epitaxial Planar Transistor(Driver for Solenoid and Motor/ Series Regulator and General Purpose) |
Sanken |
| 1114 |
2SC388ATM |
Silicon NPN transistor for TV final picture IF amplifier applications |
TOSHIBA |
| 1115 |
2SC4080 |
NPN Bipolar Transistor for HF/Wide Band Amplifiers |
ON Semiconductor |
| 1116 |
2SC4110 |
NPN Bipolar Transistor for Switching Regulator Applications |
ON Semiconductor |
| 1117 |
2SC4183 |
RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
NEC |
| 1118 |
2SC4200 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE VIDEO DRIVER FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 1119 |
2SC4332 |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
NEC |
| 1120 |
2SC4332-Z |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
NEC |
| 1121 |
2SC4346 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING |
NEC |
| 1122 |
2SC4346-Z |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING |
NEC |
| 1123 |
2SC4423 |
NPN Bipolar Transistor for Switching Regulator Applications |
ON Semiconductor |
| 1124 |
2SC4883A |
Transistor For Power Amplifier |
Sanken |
| 1125 |
2SC5200N |
Power transistor for high-speed switching applications |
TOSHIBA |
| 1126 |
2SC5248 |
Transistor for audio amplifier output stages / TV velocity modulation |
ROHM |
| 1127 |
2SC5288 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 1128 |
2SC5288-T1 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 1129 |
2SC5289 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 1130 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 1131 |
2SC5376FV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1132 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 1133 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 1134 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 1135 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 1136 |
2SC5431 |
NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX |
NEC |
| 1137 |
2SC5432 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 1138 |
2SC5433 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 1139 |
2SC5434 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 1140 |
2SC5435 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
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