No. |
Part Name |
Description |
Manufacturer |
1171 |
2SC6135 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
1172 |
2SC6140 |
Power transistor for high-speed switching applications |
TOSHIBA |
1173 |
2SC6142 |
Power transistor for high-speed switching applications |
TOSHIBA |
1174 |
2SC940 |
NPN silicon expitaxial MESA transistor for B/W TV horizontal deflection output |
NEC |
1175 |
2SC979 |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
1176 |
2SC979A |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
1177 |
2SC998 |
Silicon NPN epitaxial planar VHF transistor ft=450MHz |
TOSHIBA |
1178 |
2SD106A |
Ultra-compact dual SCALE driver for IGBTs with blocking voltages up to 1200V |
CONCEPT |
1179 |
2SD1092 |
NPN DOUBLE DIFFUSED TYPE (POWER REGULATOR FOR LINE OPERATED TV) |
TOSHIBA |
1180 |
2SD1208 |
Silicon NPN triple diffused transistor, power regulator for line operated TV |
TOSHIBA |
1181 |
2SD1294 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER REGULATOR FOR LINE OPERATED TV |
TOSHIBA |
1182 |
2SD1396 |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR HORIZONTAL OUTPUT (BUILT-IN DAMPER DIODE) |
SANYO |
1183 |
2SD1400 |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR CTV HORIZONTAL DEFLECTION OUTPUT |
SANYO |
1184 |
2SD1401 |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR CTV HORIZONTAL DEFLECTION OUTPUT |
SANYO |
1185 |
2SD1616 |
Transistor for audio frequency power amplifier |
USHA India LTD |
1186 |
2SD2636 |
Power transistor for low frequency applications |
TOSHIBA |
1187 |
2SD2686 |
Power transistor for low frequency applications |
TOSHIBA |
1188 |
2SD2719 |
Power transistor for low frequency applications |
TOSHIBA |
1189 |
2SD314 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
1190 |
2SD386A |
NPN Triple Diffused Planar Type Silicon Transistor For Vertical Deflection Output of Television |
SANYO |
1191 |
2SD414 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
1192 |
2SD415 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
1193 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
1194 |
2SD525 |
Power transistor for low frequency applications |
TOSHIBA |
1195 |
2SD596R |
NPN silicon epitaxial transistor for audio frequency power amplifier |
NEC |
1196 |
2SD748 |
LOW FREQUENCY POWER AMPLIFIER REGULATOR FOR TV POWER SUPPLY |
Unknow |
1197 |
2SD748A |
LOW FREQUENCY POWER AMPLIFIER REGULATOR FOR TV POWER SUPPLY |
Unknow |
1198 |
2SD798 |
Power transistor for low frequency applications |
TOSHIBA |
1199 |
2SD904 |
NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR HORIZONTAL DEFLECTION OUTPUT |
SANYO |
1200 |
2SD993 |
NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR H-DEFLECTION OUTPUT |
SANYO |
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