| No. |
Part Name |
Description |
Manufacturer |
| 11371 |
MAX9101 |
+1.0V, Micropower, SOT23 Comparators |
MAXIM - Dallas Semiconductor |
| 11372 |
MAXM17503 |
4.5V-60V, 2.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11373 |
MAXM17503ALJ+ |
4.5V-60V, 2.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11374 |
MAXM17503ALJ+T |
4.5V-60V, 2.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11375 |
MAXM17503DEMBD# |
4.5V-60V, 2.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11376 |
MAXM17504 |
4.5V-60V, 3.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11377 |
MAXM17504ALJ+ |
4.5V-60V, 3.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11378 |
MAXM17504ALJ+T |
4.5V-60V, 3.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11379 |
MAXM17505 |
4.5V-60V, 1.7A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11380 |
MAXM17505ALJ+ |
4.5V-60V, 1.7A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11381 |
MAXM17505ALJ+T |
4.5V-60V, 1.7A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
| 11382 |
MB10S-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=0.8A |
Comchip Technology |
| 11383 |
MB10S-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=0.8A |
Comchip Technology |
| 11384 |
MB252 |
Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25A at Tc=55degC. |
Rectron Semiconductor |
| 11385 |
MB252 |
Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25A at Tc=55degC. |
Rectron Semiconductor |
| 11386 |
MB2S-G |
Bridge Rectifiers, VRRM=200V, VDC=200V, I(AV)=0.8A |
Comchip Technology |
| 11387 |
MB2S-G |
Bridge Rectifiers, VRRM=200V, VDC=200V, I(AV)=0.8A |
Comchip Technology |
| 11388 |
MB4S-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=0.8A |
Comchip Technology |
| 11389 |
MB4S-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=0.8A |
Comchip Technology |
| 11390 |
MB6S-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=0.8A |
Comchip Technology |
| 11391 |
MB6S-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=0.8A |
Comchip Technology |
| 11392 |
MB8S-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=0.8A |
Comchip Technology |
| 11393 |
MB8S-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=0.8A |
Comchip Technology |
| 11394 |
MBR10H100CT |
100V, 10A SWITCHMODE Power Rectifier |
ON Semiconductor |
| 11395 |
MBR10H150CT |
Dual High-Voltage Schottky Rectifiers, Forward Current 10A, Reverse Voltage 150V, Max. Junction Temperature 175�C |
Vishay |
| 11396 |
MBR10L60CT |
SWITCHMODE Power Rectifier 60V, 10A |
ON Semiconductor |
| 11397 |
MBR20100CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=20A |
Comchip Technology |
| 11398 |
MBR20100CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=20A |
Comchip Technology |
| 11399 |
MBR20150CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=150V, VR=150V, IO=20A |
Comchip Technology |
| 11400 |
MBR20150CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=150V, VR=150V, IO=20A |
Comchip Technology |
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