No. |
Part Name |
Description |
Manufacturer |
11491 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
11492 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
11493 |
MJD122-1 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
11494 |
MJD122-1 |
NPN transistor for high DC current gain, 100V, 8A |
ON Semiconductor |
11495 |
MJD122-1 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
11496 |
MJD122T4 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
11497 |
MJD122T4 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
11498 |
MJD127 |
PNP darlington transistor for high DC current gain, 100V, 8A |
Samsung Electronic |
11499 |
MJD127-1 |
PNP transistor for high DC current gain, 100V, 8A |
Fairchild Semiconductor |
11500 |
MJD127-1 |
PNP transistor for high DC current gain, 100V, 8A |
ON Semiconductor |
11501 |
MJD127-1 |
PNP darlington transistor for high DC current gain, 100V, 8A |
Samsung Electronic |
11502 |
MJD127-1 |
PNP darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
11503 |
MJD127T4 |
PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
11504 |
MJD127T4 |
PNP darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
11505 |
MJE205 |
5A Medium Power NPN silicon transistor, 50V, 65W, complementary to PNP MJE105 |
Motorola |
11506 |
MJE2955-G |
General Purpose Transistor, VCBO=-70V, VCEO=-60V, VEBO=-5V, IC=-10A |
Comchip Technology |
11507 |
MJE2955-G |
General Purpose Transistor, VCBO=-70V, VCEO=-60V, VEBO=-5V, IC=-10A |
Comchip Technology |
11508 |
MKP 336 6 Y2 |
Class Y2, AC 250V, C-range 1nF-47nF, 10-15mm pitch, boxed |
Vishay |
11509 |
MKP 338 1 X1 |
Class X1, AC 440V, C-range 10nF-1µF, 15-27,5mm pitch, boxed |
Vishay |
11510 |
MKP 338 4 X2 |
Class X2, AC 300V, C-range 10nF-10µF, 15-55mm pitch, boxed |
Vishay |
11511 |
MKP 338 6 Y2 |
Class Y2, AC 300V, C-range 1nF-470nF, 7,5-27,5mm pitch, boxed |
Vishay |
11512 |
MMBT2222A-G |
General Purpose Transistor, VCBO=75V, VCEO=40V, VEBO=6V, IC=0.6A |
Comchip Technology |
11513 |
MMBT2222A-HF |
Halogen Free Transistor, VCBO=75V, VCEO=40V, VEBO=6V, IC=0.6mA |
Comchip Technology |
11514 |
MMBT2907-G |
General Purpose Transistor, VCBO=-60V, VCEO=-40V, VEBO=-5V, IC=-0.6A |
Comchip Technology |
11515 |
MMBT2907-G |
General Purpose Transistor, VCBO=-60V, VCEO=-40V, VEBO=-5V, IC=-0.6A |
Comchip Technology |
11516 |
MMBT2907A-G |
General Purpose Transistor, VCBO=-60V, VCEO=-60V, VEBO=-5V, IC=-0.6A |
Comchip Technology |
11517 |
MMBT2907A-G |
General Purpose Transistor, VCBO=-60V, VCEO=-60V, VEBO=-5V, IC=-0.6A |
Comchip Technology |
11518 |
MMBT3904-G |
General Purpose Transistor, VCBO=60V, VCEO=40V, VEBO=6V, IC=0.2A |
Comchip Technology |
11519 |
MMBT3904-G |
General Purpose Transistor, VCBO=60V, VCEO=40V, VEBO=6V, IC=0.2A |
Comchip Technology |
11520 |
MMBT3904-HF |
Halogen Free Transistor, VCBO=60V, VCEO=40V, VEBO=6V, IC=200mA |
Comchip Technology |
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