| No. |
Part Name |
Description |
Manufacturer |
| 11581 |
MP1002G-G |
Bridge Rectifiers, VRRM=200V, VDC=200V, I(AV)=10A |
Comchip Technology |
| 11582 |
MP1002G-G |
Bridge Rectifiers, VRRM=200V, VDC=200V, I(AV)=10A |
Comchip Technology |
| 11583 |
MP1004G-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=10A |
Comchip Technology |
| 11584 |
MP1004G-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=10A |
Comchip Technology |
| 11585 |
MP1006G-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=10A |
Comchip Technology |
| 11586 |
MP1006G-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=10A |
Comchip Technology |
| 11587 |
MP1008G-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=10A |
Comchip Technology |
| 11588 |
MP1008G-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=10A |
Comchip Technology |
| 11589 |
MP1010G-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=10A |
Comchip Technology |
| 11590 |
MP1010G-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=10A |
Comchip Technology |
| 11591 |
MP110B |
25 Ampere PNP ADE Germanium Power Switching Transistor 90V, 106W |
Motorola |
| 11592 |
MPE-24H |
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V |
Sanken |
| 11593 |
MPE-24H |
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V |
Sanken |
| 11594 |
MPE-29G |
Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package |
Sanken |
| 11595 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
| 11596 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
| 11597 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 11598 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 11599 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 11600 |
MPS2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 11601 |
MPS6531 |
Planar passivated epitaxial NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 11602 |
MPS6532 |
Planar passivated epitaxial NPN silicon transistor. 30V, 600mA. |
General Electric Solid State |
| 11603 |
MPS6534 |
Planar passivated epitaxial PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 11604 |
MR2266 |
800V, 1.0A High-Voltage, axial-lead, silicon rectifiers, designed for television "damper" diode service |
Motorola |
| 11605 |
MR2271 |
300V, 1A Fast recovery silicon rectifier designed for video power supply applications |
Motorola |
| 11606 |
MR2273 |
800V, 1.0A High-Voltage, axial-lead, silicon rectifiers, designed for television "damper" diode service |
Motorola |
| 11607 |
MSK4370 |
10 AMP, 500V, 3 PHASE IGBT BRUSHLESS MOTOR CONTROLLER |
M.S. Kennedy Corp. |
| 11608 |
MSK4370HU |
10 AMP, 500V, 3 PHASE IGBT BRUSHLESS MOTOR CONTROLLER |
M.S. Kennedy Corp. |
| 11609 |
MTB50N06V |
Power MOSFET 42 A, 60V, N-Channel D2PAK |
ON Semiconductor |
| 11610 |
MTP3055V |
TMOS Power FET 60V, 0.15Ohm |
ON Semiconductor |
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