| No. |
Part Name |
Description |
Manufacturer |
| 1141 |
2N744 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1142 |
2N753 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1143 |
2N753 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1144 |
2N834 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1145 |
2N834A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1146 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1147 |
2N914 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1148 |
2N914 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1149 |
2N917 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 1150 |
2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 1151 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 1152 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1153 |
2N929 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1154 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1155 |
2N930 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1156 |
2N995 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1157 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 1158 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 1159 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
| 1160 |
2SA1146 |
Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications |
TOSHIBA |
| 1161 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 1162 |
2SA1225 |
Silicon PNP epitaxial power transistor, complementary 2SC2983 |
TOSHIBA |
| 1163 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 1164 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 1165 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1166 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 1167 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
| 1168 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 1169 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 1170 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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