| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 1172 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 1173 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 1174 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 1175 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 1176 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 1177 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 1178 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 1179 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 1180 |
2SA2012 |
Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 1181 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1182 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 1183 |
2SA429G |
Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications |
TOSHIBA |
| 1184 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1185 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1186 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1187 |
2SA502 |
Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications |
TOSHIBA |
| 1188 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
| 1189 |
2SA509G |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G |
TOSHIBA |
| 1190 |
2SA52 |
Germanium PNP alloy junction transistor, AM Frequency Converter Applications |
TOSHIBA |
| 1191 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 1192 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 1193 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 1194 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 1195 |
2SA561 |
Silicon PNP epitaxial planar transistor, complementary to 2SC734 |
TOSHIBA |
| 1196 |
2SA565 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 1197 |
2SA566 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 1198 |
2SA661 |
Silicon PNP epitaxial planar transistor, complementary to 2SC1166 |
TOSHIBA |
| 1199 |
2SA812R |
PNP silicon epitaxial transistor, audio frequency |
NEC |
| 1200 |
2SA940 |
Silicon PNP triple diffused power transistor, complementary to 2SC2073 |
TOSHIBA |
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