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Datasheets for ITAXIA

Datasheets found :: 14412
Page: | 379 | 380 | 381 | 382 | 383 | 384 | 385 | 386 | 387 |
No. Part Name Description Manufacturer
11461 MJE702STU PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11462 MJE703 PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11463 MJE703 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11464 MJE703 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
11465 MJE703STU PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11466 MJE800 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11467 MJE800 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11468 MJE800 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11469 MJE800STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11470 MJE801 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11471 MJE801 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11472 MJE801 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11473 MJE801STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11474 MJE802 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11475 MJE802 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11476 MJE802 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11477 MJE802STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11478 MJE803 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11479 MJE803 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11480 MJE803 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11481 MJE803STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11482 MM2483 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
11483 MM2484 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
11484 MM3000 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V Motorola
11485 MM3001 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V Motorola
11486 MM3002 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V Motorola
11487 MM3003 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V Motorola
11488 MMBA811C6 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
11489 MMBA812M6 PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor) Samsung Electronic
11490 MMBC1622D8 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic


Datasheets found :: 14412
Page: | 379 | 380 | 381 | 382 | 383 | 384 | 385 | 386 | 387 |



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