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Datasheets for ITAXIA

Datasheets found :: 14412
Page: | 382 | 383 | 384 | 385 | 386 | 387 | 388 | 389 | 390 |
No. Part Name Description Manufacturer
11551 MP4101 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. TOSHIBA
11552 MP4104 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11553 MP4301 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11554 MP4303 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11555 MP4304 Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11556 MP4305 Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11557 MP4501 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11558 MP4502 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11559 MP4503 Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11560 MP4504 Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11561 MP4514 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11562 MP6301 Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor TOSHIBA
11563 MP6901 Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
11564 MPS-A13 SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS Micro Electronics
11565 MPS-A14 SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS Micro Electronics
11566 MPS-A65 SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS Micro Electronics
11567 MPS-A66 SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS Micro Electronics
11568 MPS2222 Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. General Electric Solid State
11569 MPS2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
11570 MPS2222A Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. General Electric Solid State
11571 MPS2222A 75 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
11572 MPS2711 NPN silicon planar epitaxial transistor Micro Electronics
11573 MPS2711 NPN silicon epitaxial transistor designed for low-power, small-signal audio applications Motorola
11574 MPS2712 NPN silicon planar epitaxial transistor Micro Electronics
11575 MPS2712 NPN silicon epitaxial transistor designed for low-power, small-signal audio applications Motorola
11576 MPS2716 NPN silicon planar epitaxial transistor Micro Electronics
11577 MPS2906 Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
11578 MPS2906A Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
11579 MPS2907 Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
11580 MPS2907 60 V, 600 mA, PNP epitaxial silicon transistor Samsung Electronic


Datasheets found :: 14412
Page: | 382 | 383 | 384 | 385 | 386 | 387 | 388 | 389 | 390 |



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