| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
2SD845 |
Silicon NPN triple diffused power transistor, complementary to 2SB755 |
TOSHIBA |
| 1172 |
2SD96 |
Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 1173 |
2SJ324-Z |
P-channel enhancement type |
NEC |
| 1174 |
2SJ324-Z-E1 |
P-channel enhancement type |
NEC |
| 1175 |
2SJ324-Z-E2 |
P-channel enhancement type |
NEC |
| 1176 |
2SJ324-Z-T1 |
P-channel enhancement type |
NEC |
| 1177 |
2SJ324-Z-T2 |
P-channel enhancement type |
NEC |
| 1178 |
2SJ325(JM) |
P-channel enhancement type |
NEC |
| 1179 |
2SJ325-Z |
P-channel enhancement type |
NEC |
| 1180 |
2SJ325-Z-E1 |
P-channel enhancement type |
NEC |
| 1181 |
2SJ325-Z-E1(JM) |
P-channel enhancement type |
NEC |
| 1182 |
2SJ325-Z-E2 |
P-channel enhancement type |
NEC |
| 1183 |
2SJ325-Z-E2(JM) |
P-channel enhancement type |
NEC |
| 1184 |
2SJ325-Z-T1 |
P-channel enhancement type |
NEC |
| 1185 |
2SJ325-Z-T2 |
P-channel enhancement type |
NEC |
| 1186 |
2SJ326-Z-E1 |
P-channel enhancement type |
NEC |
| 1187 |
2SJ326-Z-E2 |
P-channel enhancement type |
NEC |
| 1188 |
2SJ326-Z-T1 |
P-channel enhancement type |
NEC |
| 1189 |
2SJ326-Z-T2 |
P-channel enhancement type |
NEC |
| 1190 |
2SJ327(JM) |
P-channel enhancement type |
NEC |
| 1191 |
2SJ327-Z-E1 |
P-channel enhancement type |
NEC |
| 1192 |
2SJ327-Z-E2 |
P-channel enhancement type |
NEC |
| 1193 |
2SJ327-Z-T1 |
P-channel enhancement type |
NEC |
| 1194 |
2SJ327-Z-T2 |
P-channel enhancement type |
NEC |
| 1195 |
2SJ328-S |
P-channel enhancement type |
NEC |
| 1196 |
2SJ328-Z-E1 |
P-channel enhancement type |
NEC |
| 1197 |
2SJ328-Z-E2 |
P-channel enhancement type |
NEC |
| 1198 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 1199 |
2SJ557-T1B |
Pch enhancement type MOS FET |
NEC |
| 1200 |
2SJ557-T2B |
Pch enhancement type MOS FET |
NEC |
| | | |
