| No. |
Part Name |
Description |
Manufacturer |
| 1261 |
2SK3503-T1 |
N Channel enhancement MOS FET |
NEC |
| 1262 |
2SK3503-T2 |
N Channel enhancement MOS FET |
NEC |
| 1263 |
2SK3576 |
N Channel enhancement MOS FET |
NEC |
| 1264 |
2SK3576-T1B |
N Channel enhancement MOS FET |
NEC |
| 1265 |
2SK3576-T2B |
N Channel enhancement MOS FET |
NEC |
| 1266 |
2SK3577 |
N Channel enhancement MOS FET |
NEC |
| 1267 |
2SK3577-T1B |
N Channel enhancement MOS FET |
NEC |
| 1268 |
2SK3577-T2B |
N Channel enhancement MOS FET |
NEC |
| 1269 |
2SK3663 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 1270 |
2SK3664 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 1271 |
2SK3749 |
Nch enhancement type MOS FET |
NEC |
| 1272 |
2SK3995 |
Silicon N-channel enhancement MOSFET |
Panasonic |
| 1273 |
2SK416 |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
Hitachi Semiconductor |
| 1274 |
2SK416L |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
Hitachi Semiconductor |
| 1275 |
2SK416S |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
Hitachi Semiconductor |
| 1276 |
2SK4174 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 1277 |
2SK4208 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 1278 |
2SK536 |
N-Channel Enhancement MOS Silicon FET Analog Switch Applications |
SANYO |
| 1279 |
2SK583 |
N-Channel Enhancement Silicon MOSFET Analog Switch Applications |
SANYO |
| 1280 |
2SK669 |
N-Channel Enhancement Silicon MOSFET Very High-Speed Switch, Analog Switch Applications |
SANYO |
| 1281 |
3055L |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 1282 |
3275 |
COMPLEMENTARY-OUTPUT HALL-EFFECT LATCH |
Allegro MicroSystems |
| 1283 |
3C91C |
Optoelectronic coupling element (Optocoupler) |
TELEFUNKEN |
| 1284 |
3C92C |
Optoelectronic coupling element (Optocoupler) |
TELEFUNKEN |
| 1285 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 1286 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1287 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 1288 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1289 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 1290 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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