| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
1N5352B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1172 |
1N5353B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1173 |
1N5353B |
16 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1174 |
1N5353B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1175 |
1N5354B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1176 |
1N5354B |
17 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1177 |
1N5354B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1178 |
1N5355B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1179 |
1N5355B |
18 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1180 |
1N5355B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1181 |
1N5356B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1182 |
1N5356B |
19 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1183 |
1N5356B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1184 |
1N5357B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1185 |
1N5357B |
20 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1186 |
1N5357B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1187 |
1N5358B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1188 |
1N5358B |
22 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1189 |
1N5358B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1190 |
1N5359B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1191 |
1N5359B |
24 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1192 |
1N5359B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1193 |
1N536 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 1194 |
1N5360B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1195 |
1N5360B |
25 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1196 |
1N5360B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1197 |
1N5361B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1198 |
1N5361B |
27 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1199 |
1N5361B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1200 |
1N5362B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
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