| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
1N5362B |
28 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1202 |
1N5362B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1203 |
1N5363B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1204 |
1N5363B |
30 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1205 |
1N5363B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1206 |
1N5364B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1207 |
1N5364B |
33 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1208 |
1N5364B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1209 |
1N5365B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1210 |
1N5365B |
36 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1211 |
1N5365B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1212 |
1N5366B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1213 |
1N5366B |
39 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1214 |
1N5366B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1215 |
1N5367B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1216 |
1N5367B |
43 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1217 |
1N5367B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1218 |
1N5368B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1219 |
1N5368B |
47 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1220 |
1N5368B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1221 |
1N5369B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1222 |
1N5369B |
51 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1223 |
1N5369B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1224 |
1N537 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 1225 |
1N5370B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 56V, Izt =20mA |
Panjit International Inc |
| 1226 |
1N5370B |
56 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1227 |
1N5370B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1228 |
1N5371B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 1229 |
1N5371B |
60 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1230 |
1N5371B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
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