| No. |
Part Name |
Description |
Manufacturer |
| 11851 |
UPA1952TE |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11852 |
UPA1970TE |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11853 |
UPA1980TE |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11854 |
UPA2450BTL |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11855 |
UPA2451BTL |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11856 |
UPA2452TL |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11857 |
UPA2502TM |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11858 |
UPA2503TM |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11859 |
UPA2510TM |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11860 |
UPA610TA |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
| 11861 |
UPA611TA |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
| 11862 |
UPA620TT |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11863 |
UPA621TT |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11864 |
UPA622TT |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11865 |
UPA622TT-E1-A |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11866 |
UPA622TT-E2-A |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11867 |
UPA650TT |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11868 |
UPA651TT |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11869 |
UPA652TT |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11870 |
UPA653TT |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11871 |
uPA68H |
N-Channel Silicon Dual Junction Field Effect Transistor |
NEC |
| 11872 |
US1A |
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER |
General Semiconductor |
| 11873 |
US1A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 11874 |
US1B |
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER |
General Semiconductor |
| 11875 |
US1B |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 11876 |
US1D |
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER |
General Semiconductor |
| 11877 |
US1D |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 11878 |
US1G |
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER |
General Semiconductor |
| 11879 |
US1G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 11880 |
US1J |
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER |
General Semiconductor |
| | | |
