| No. |
Part Name |
Description |
Manufacturer |
| 11881 |
US1J |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 11882 |
US1K |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 11883 |
US1M |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 11884 |
US3881 |
CMOS Low Voltage Hall Effect Latch |
Melexis |
| 11885 |
US3881E |
CMOS low voltage hall effect latch |
Melexis |
| 11886 |
US3881ESO |
CMOS Low Voltage Hall Effect Latch |
Melexis |
| 11887 |
US3881EUA |
CMOS Low Voltage Hall Effect Latch |
Melexis |
| 11888 |
US3881L |
CMOS low voltage hall effect latch |
Melexis |
| 11889 |
US3881LSO |
CMOS Low Voltage Hall Effect Latch |
Melexis |
| 11890 |
US3881LUA |
CMOS Low Voltage Hall Effect Latch |
Melexis |
| 11891 |
V62/04628-01 |
Enhanced Plastic SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator with Sync |
National Semiconductor |
| 11892 |
V62/04629-01 |
Enhanced Plastic SIMPLE SWITCHER Power Converter High Efficiency 1A Step-Down Voltage Regulator with Features |
National Semiconductor |
| 11893 |
V62/04630-01 |
Enhanced Plastic SIMPLE SWITCHER Power Converter High Efficiency 1A Step-Down Voltage Regulator |
National Semiconductor |
| 11894 |
V62/04631-01 |
Enhanced Plastic SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator |
National Semiconductor |
| 11895 |
WSH130 |
Hall Effect Sensor IC |
Winson |
| 11896 |
WSH130-XPAN1 |
Hall Effect Sensor IC |
Winson |
| 11897 |
WSH130-XPAN2 |
Hall Effect Sensor IC |
Winson |
| 11898 |
WSH130-XPAN3 |
Hall Effect Sensor IC |
Winson |
| 11899 |
WSH130-XPAN5 |
Hall Effect Sensor IC |
Winson |
| 11900 |
WSH130-XPCN1 |
Hall Effect Sensor IC |
Winson |
| 11901 |
WSH130-XPCN2 |
Hall Effect Sensor IC |
Winson |
| 11902 |
WSH130-XPCN3 |
Hall Effect Sensor IC |
Winson |
| 11903 |
WSH130-XPCN5 |
Hall Effect Sensor IC |
Winson |
| 11904 |
YTFP250 |
V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications |
TOSHIBA |
| 11905 |
YTFP250 |
V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications |
TOSHIBA |
| 11906 |
Z2801R5S_EM |
28V input (nominal), 1.5V output; high volatge high efficiency radiation hardened DC/DC converter |
International Rectifier |
| 11907 |
Z2802R5S_EM |
28V input (nominal), 2.5V output; high volatge high efficiency radiation hardened DC/DC converter |
International Rectifier |
| 11908 |
Z2803R5S |
28V input (nominal), 3.3V output; high volatge high efficiency radiation hardened DC/DC converter |
International Rectifier |
| 11909 |
Z2803R5S_EM |
28V input (nominal), 3.3V output; high volatge high efficiency radiation hardened DC/DC converter |
International Rectifier |
| 11910 |
ZTL431 |
Cost Effective Adjustable Precision Shunt Regulator |
Diodes |
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