| No. |
Part Name |
Description |
Manufacturer |
| 11851 |
HM4864A-20 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 11852 |
HM4864AP-12 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 11853 |
HM4864AP-15 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 11854 |
HM4864AP-20 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 11855 |
HM4864P-2 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 11856 |
HM4864P-3 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 11857 |
HM5116100 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
| 11858 |
HM5116100S |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
| 11859 |
HM5116100S-6 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
| 11860 |
HM5116100S-7 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
| 11861 |
HM51258P |
262144 word x 1 Bit Static Column CMOS DRAM |
Hitachi Semiconductor |
| 11862 |
HM514100DLS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
| 11863 |
HM514100DLS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
| 11864 |
HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
| 11865 |
HM514100DS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
| 11866 |
HM514100DS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
| 11867 |
HM514100DS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
| 11868 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11869 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11870 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11871 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11872 |
HM514260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11873 |
HM514260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11874 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11875 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11876 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11877 |
HM514260ALTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11878 |
HM514260ALTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11879 |
HM514260ALTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11880 |
HM514260ALZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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