| No. |
Part Name |
Description |
Manufacturer |
| 11941 |
HM5164165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 11942 |
HM5164165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 11943 |
HM5164165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 11944 |
HM5164165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 11945 |
HM5164165TT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 11946 |
HM5164165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 11947 |
HM5165165F |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11948 |
HM5165165FJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11949 |
HM5165165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11950 |
HM5165165FLJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11951 |
HM5165165FLJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11952 |
HM5165165FLTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11953 |
HM5165165FLTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11954 |
HM5165165FTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11955 |
HM5165165FTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 11956 |
HM5165165J-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 11957 |
HM5165165J-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 11958 |
HM5165165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 11959 |
HM5165165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 11960 |
HM5165165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 11961 |
HM5165165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 11962 |
HM5165165TT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 11963 |
HM5165165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 11964 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11965 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11966 |
HM51S4260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11967 |
HM51S4260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11968 |
HM51S4260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11969 |
HM51S4260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11970 |
HM51S4260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| | | |
