| No. |
Part Name |
Description |
Manufacturer |
| 11911 |
MV1666 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 11912 |
MV1812A |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 11913 |
MV1812B |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 11914 |
N125 |
Silicon, epitaxial, planar diode |
Mikroelektronikai Vallalat |
| 11915 |
ND5051-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11916 |
ND5052-3G |
6.5 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11917 |
ND5111-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11918 |
ND5112-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11919 |
ND5112-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11920 |
ND5113-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11921 |
ND5113-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11922 |
ND5114-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11923 |
ND5114-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 11924 |
ND587R-3R |
GaAs Epitaxial schottky barrier diode QUAD |
NEC |
| 11925 |
ND587T-3R |
GaAs Epitaxial Schottky barrier diode PAIR |
NEC |
| 11926 |
NE461M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 11927 |
NE461M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 11928 |
NE58219 |
NECs NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
NEC |
| 11929 |
NE58219-T1 |
NECs NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
NEC |
| 11930 |
NE68939 |
NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 11931 |
NE68939-T1 |
NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 11932 |
NE69039 |
NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 11933 |
NE69039-T1 |
NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 11934 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
| 11935 |
NE699M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
| 11936 |
NE856M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 11937 |
NE856M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 11938 |
NEL200101-24 |
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
NEC |
| 11939 |
NEL2004F02-24 |
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
NEC |
| 11940 |
NEL2012F03-24 |
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER |
NEC |
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