| No. |
Part Name |
Description |
Manufacturer |
| 11791 |
MPSA77 |
PNP Epitaxial Silicon Darlington Transistor |
Samsung Electronic |
| 11792 |
MPSA92 |
PNP Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
| 11793 |
MPSA92M |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
DC Components |
| 11794 |
MPSA93 |
PNP Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
| 11795 |
MPSH10 |
NPN Epitaxial Silicon VHF/UHF Transistor |
Samsung Electronic |
| 11796 |
MPSH11 |
NPN Epitaxial Silicon VHF/UHF Transistor |
Samsung Electronic |
| 11797 |
MPSH17 |
NPN Epitaxial Silicon CATV Transistor |
Samsung Electronic |
| 11798 |
MPSH24 |
NPN Epitaxial Silicon VHF Transistor |
Samsung Electronic |
| 11799 |
MPSL01 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 11800 |
MPSL51 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 11801 |
MSD6100 |
Silicon epitaxial dual switching diode |
Motorola |
| 11802 |
MSD6101 |
Silicon epitaxial dual discriminator diode designed for use in FM discriminator applications |
Motorola |
| 11803 |
MSD6102 |
Silicon epitaxial dual diode designed for use as a horizontal phase detector for television receivers |
Motorola |
| 11804 |
MSD6150 |
Silicon epitaxial dual diode designed for consumer applications |
Motorola |
| 11805 |
MSD7000 |
Silicon Epitaxial Dual series diode |
Motorola |
| 11806 |
MT3S03AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11807 |
MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11808 |
MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11809 |
MT3S04AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11810 |
MT3S04AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11811 |
MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11812 |
MT3S05T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11813 |
MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11814 |
MT3S06T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11815 |
MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11816 |
MT3S07S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11817 |
MT3S07T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11818 |
MT3S07U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11819 |
MT3S08T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11820 |
MT3S35T |
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
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