No. |
Part Name |
Description |
Manufacturer |
11671 |
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11672 |
MP6301 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor |
TOSHIBA |
11673 |
MP6901 |
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
11674 |
MPS-A13 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
11675 |
MPS-A14 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
11676 |
MPS-A65 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
11677 |
MPS-A66 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
11678 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
11679 |
MPS2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11680 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
11681 |
MPS2222A |
75 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11682 |
MPS2711 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11683 |
MPS2711 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
11684 |
MPS2712 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11685 |
MPS2712 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
11686 |
MPS2716 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11687 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
11688 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
11689 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
11690 |
MPS2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
11691 |
MPS2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
11692 |
MPS2923 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11693 |
MPS2924 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11694 |
MPS2925 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
11695 |
MPS2926 |
NPN silicon epitaxial transistor |
Motorola |
11696 |
MPS3390 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11697 |
MPS3391 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11698 |
MPS3392 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11699 |
MPS3393 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
11700 |
MPS3394 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
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