No. |
Part Name |
Description |
Manufacturer |
11551 |
MJE340 |
300 V, 500 A, NPN epitaxial silicon transistor |
Samsung Electronic |
11552 |
MJE340STU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11553 |
MJE350 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11554 |
MJE350 |
-300 V, -500 A, PNP epitaxial silicon transistor |
Samsung Electronic |
11555 |
MJE350STU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11556 |
MJE370 |
PNP Epitaxial Power Transistor |
National Semiconductor |
11557 |
MJE371 |
PNP Epitaxial Power Transistor |
National Semiconductor |
11558 |
MJE520 |
NPN Epitaxial Power Transistor |
National Semiconductor |
11559 |
MJE521 |
NPN Epitaxial Power Transistor |
National Semiconductor |
11560 |
MJE700 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11561 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11562 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11563 |
MJE700STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11564 |
MJE701 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11565 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11566 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11567 |
MJE701STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11568 |
MJE702 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11569 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11570 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11571 |
MJE702STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11572 |
MJE703 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11573 |
MJE703 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11574 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11575 |
MJE703STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11576 |
MJE800 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11577 |
MJE800 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11578 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11579 |
MJE800STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11580 |
MJE801 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
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