No. |
Part Name |
Description |
Manufacturer |
11461 |
MEO500-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
11462 |
MEO550-02DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
11463 |
MF3304 |
PNP silicon epitaxial transistor designed for low-level, high-speed switching applications |
Motorola |
11464 |
MH0810 |
EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT |
Micro Electronics |
11465 |
MH8100 |
EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT |
Micro Electronics |
11466 |
MJ1000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
11467 |
MJ1001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
11468 |
MJ15003 |
Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. |
General Electric Solid State |
11469 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
11470 |
MJ15015 |
Silicon Epitaxial Planar Transistor |
Wing Shing Computer Components |
11471 |
MJ15022 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
11472 |
MJ15024 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
11473 |
MJ2500 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
11474 |
MJ2500 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
11475 |
MJ2501 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
11476 |
MJ2501 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
11477 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
11478 |
MJ3000 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
11479 |
MJ3000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
11480 |
MJ3001 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
11481 |
MJ3001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
11482 |
MJ900 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
11483 |
MJ901 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
11484 |
MJD200 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11485 |
MJD210 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11486 |
MJD210TF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11487 |
MJD29 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11488 |
MJD2955 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11489 |
MJD2955TF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11490 |
MJD29C |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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