DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for TAXI

Datasheets found :: 14522
Page: | 383 | 384 | 385 | 386 | 387 | 388 | 389 | 390 | 391 |
No. Part Name Description Manufacturer
11581 MJE801 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11582 MJE801 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11583 MJE801STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11584 MJE802 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11585 MJE802 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11586 MJE802 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11587 MJE802STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11588 MJE803 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11589 MJE803 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11590 MJE803 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11591 MJE803STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11592 MM2483 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
11593 MM2484 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
11594 MM3000 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V Motorola
11595 MM3001 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V Motorola
11596 MM3002 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V Motorola
11597 MM3003 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V Motorola
11598 MMBA811C6 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
11599 MMBA812M6 PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor) Samsung Electronic
11600 MMBC1622D8 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
11601 MMBC1623L6 50 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
11602 MMBD4148 350mW 100 Volt Silicon Epitaxial Diode Micro Commercial Components
11603 MMBD914 350mW 100 Volt Silicon Epitaxial Diode Micro Commercial Components
11604 MMBT2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
11605 MMBT2222A NPN Epitaxial Silicon Transistor, SOT-23 case marking 1P Samsung Electronic
11606 MMBT2222AT NPN Epitaxial Silicon Transistor Fairchild Semiconductor
11607 MMBT2484 NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1U Samsung Electronic
11608 MMBT2907 60 V, 600 mA, PNP epitaxial silicon transistor Samsung Electronic
11609 MMBT2907A PNP Epitaxial Silicon Transistor, marking 2F Samsung Electronic
11610 MMBT3904 NPN Epitaxial Silicon Transistor, SOT-23 case marking 1A Samsung Electronic


Datasheets found :: 14522
Page: | 383 | 384 | 385 | 386 | 387 | 388 | 389 | 390 | 391 |



© 2024 - www Datasheet Catalog com