No. |
Part Name |
Description |
Manufacturer |
11581 |
MJE801 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11582 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11583 |
MJE801STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11584 |
MJE802 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11585 |
MJE802 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11586 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11587 |
MJE802STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11588 |
MJE803 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11589 |
MJE803 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11590 |
MJE803 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11591 |
MJE803STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11592 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
11593 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
11594 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
11595 |
MM3001 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V |
Motorola |
11596 |
MM3002 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V |
Motorola |
11597 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
11598 |
MMBA811C6 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
11599 |
MMBA812M6 |
PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor) |
Samsung Electronic |
11600 |
MMBC1622D8 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11601 |
MMBC1623L6 |
50 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11602 |
MMBD4148 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
11603 |
MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
11604 |
MMBT2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11605 |
MMBT2222A |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1P |
Samsung Electronic |
11606 |
MMBT2222AT |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11607 |
MMBT2484 |
NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1U |
Samsung Electronic |
11608 |
MMBT2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
11609 |
MMBT2907A |
PNP Epitaxial Silicon Transistor, marking 2F |
Samsung Electronic |
11610 |
MMBT3904 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1A |
Samsung Electronic |
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