| No. |
Part Name |
Description |
Manufacturer |
| 11431 |
MC2840 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11432 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 11433 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11434 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11435 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11436 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 11437 |
MC2850 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11438 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11439 |
MC2854 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11440 |
MC961 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11441 |
MC971 |
For High Speed Swiching Application Silicon Epitaxial Type(Common Cathode) |
Isahaya Electronics Corporation |
| 11442 |
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11443 |
MC982 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11444 |
MCL245 |
SILICON EPITAXIAL PLANAR DIODE |
Semtech |
| 11445 |
ME4101 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 11446 |
ME4102 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 11447 |
ME4103 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 11448 |
MEA250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11449 |
MEA300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11450 |
MEA75-12 |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11451 |
MEA75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11452 |
MEE250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11453 |
MEE300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11454 |
MEE75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11455 |
MEK150-04DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11456 |
MEK250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11457 |
MEK300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11458 |
MEK350-02DA |
200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11459 |
MEK75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11460 |
MEO450-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
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