| No. |
Part Name |
Description |
Manufacturer |
| 11401 |
MA6X1280G |
Silicon epitaxial planar type |
Panasonic |
| 11402 |
MA6X1290G |
Silicon epitaxial planar type |
Panasonic |
| 11403 |
MA6X7180G |
Silicon epitaxial planar type |
Panasonic |
| 11404 |
MA6XD16 |
Silicon epitaxial planar type |
Panasonic |
| 11405 |
MA860 |
Silicon epitaxial planer type |
Panasonic |
| 11406 |
MA999 |
Silicon epitaxial planer type |
Panasonic |
| 11407 |
MAS3132DG |
Silicon epitaxial planar type |
Panasonic |
| 11408 |
MAS3132EG |
Silicon epitaxial planar type |
Panasonic |
| 11409 |
MAS3795EG |
Silicon epitaxial planar type |
Panasonic |
| 11410 |
MAU2111 |
Silicon epitaxial planar type |
Panasonic |
| 11411 |
MAU2728 |
Silicon epitaxial planar type |
Panasonic |
| 11412 |
MAU27280G |
Silicon epitaxial planar type |
Panasonic |
| 11413 |
MAU2D29 |
Silicon epitaxial planar type |
Panasonic |
| 11414 |
MAU2D30 |
Silicon epitaxial planar type |
Panasonic |
| 11415 |
MAYS0750Y |
Silicon epitaxial planar type |
Panasonic |
| 11416 |
MAYS075GY |
Silicon epitaxial planar type |
Panasonic |
| 11417 |
MBT2222 |
SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS |
etc |
| 11418 |
MBT2222A |
SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS |
etc |
| 11419 |
MC1550 |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 11420 |
MC1550F |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 11421 |
MC1550G |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 11422 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11423 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11424 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11425 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11426 |
MC2835 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 11427 |
MC2836 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11428 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 11429 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 11430 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
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