| No. |
Part Name |
Description |
Manufacturer |
| 12001 |
BSY53 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 12002 |
BSY54 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12003 |
BSY54 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 12004 |
BSY55 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 12005 |
BSY55 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12006 |
BSY55 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 12007 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 12008 |
BSY56 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12009 |
BSY56 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 12010 |
BSY58 |
NPN RF transistor for switch applications |
Siemens |
| 12011 |
BSY58 |
NPN Transistor industrial type |
Siemens |
| 12012 |
BSY58 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 12013 |
BSY59 |
PNP Transistor industrial type |
Siemens |
| 12014 |
BSY62 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12015 |
BSY62 |
NPN RF transistor for switch applications |
Siemens |
| 12016 |
BSY62 |
NPN Transistor industrial type |
Siemens |
| 12017 |
BSY62A |
NPN RF transistor for switch applications |
Siemens |
| 12018 |
BSY62B |
NPN RF transistor for switch applications |
Siemens |
| 12019 |
BSY63 |
NPN RF transistor for switch applications |
Siemens |
| 12020 |
BSY63 |
NPN Transistor industrial type |
Siemens |
| 12021 |
BSY79 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12022 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
| 12023 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
| 12024 |
BSY81 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 12025 |
BSY82 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 12026 |
BSY83 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 12027 |
BSY84 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 12028 |
BSY85 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 12029 |
BSY86 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 12030 |
BSY87 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
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