| No. |
Part Name |
Description |
Manufacturer |
| 12091 |
BU312 |
NPN Silicon Power transistor for horiontal deflection output stages |
Siemens |
| 12092 |
BU323 |
16A peak NPN silicon power darlington transistor 175W 350V |
Motorola |
| 12093 |
BU323A |
16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS |
Motorola |
| 12094 |
BU323AP |
DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS |
Motorola |
| 12095 |
BU323AP |
DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS |
ON Semiconductor |
| 12096 |
BU326 |
6A high-voltage NPN silicon power transistor 90W 375V |
Motorola |
| 12097 |
BU326A |
High power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 12098 |
BU326A |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 12099 |
BU326A |
6A high-voltage NPN silicon power transistor 90W 400V |
Motorola |
| 12100 |
BU326A/4 |
High power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 12101 |
BU326A/4 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 12102 |
BU326A/5 |
High power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 12103 |
BU326A/5 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 12104 |
BU326A/6 |
High power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 12105 |
BU326A/6 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 12106 |
BU326A/7 |
High power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 12107 |
BU326A/7 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 12108 |
BU326A/8 |
High power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 12109 |
BU326A/8 |
NPN Power and Switching Transistor triple diffused |
IPRS Baneasa |
| 12110 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
| 12111 |
BU326S |
High voltage transistor for switching applications |
SGS-ATES |
| 12112 |
BU406 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 12113 |
BU406 |
High voltage transistor for switching applications |
SGS-ATES |
| 12114 |
BU406D |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 12115 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 12116 |
BU406D |
High voltage transistor for switching applications |
SGS-ATES |
| 12117 |
BU407 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 12118 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 12119 |
BU407 |
High voltage transistor for switching applications |
SGS-ATES |
| 12120 |
BU407 |
NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
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