No. |
Part Name |
Description |
Manufacturer |
1201 |
HM4816AP-3 |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1202 |
HM4816AP-3E |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1203 |
HM4816AP-4 |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1204 |
HM4816AP-7 |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1205 |
HM4864-2 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1206 |
HM4864-3 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1207 |
HM4864A-12 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1208 |
HM4864A-15 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1209 |
HM4864A-20 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1210 |
HM4864AP-12 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1211 |
HM4864AP-15 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1212 |
HM4864AP-20 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1213 |
HM4864P-2 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1214 |
HM4864P-3 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
1215 |
HM514100DLS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
1216 |
HM514100DLS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
1217 |
HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
1218 |
HM514100DS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
1219 |
HM514100DS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
1220 |
HM514100DS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
1221 |
HM514258AJP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1222 |
HM514258AJP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1223 |
HM514258AJP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1224 |
HM514258AJP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1225 |
HM514258AJP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1226 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1227 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1228 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1229 |
HM514258AP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
1230 |
HM514258AP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
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