No. |
Part Name |
Description |
Manufacturer |
1291 |
HM514260LZP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
1292 |
HM514260TT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
1293 |
HM514260TT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
1294 |
HM514260TT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
1295 |
HM514260ZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
1296 |
HM514260ZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
1297 |
HM514260ZP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
1298 |
HM514400A/AL/ASL SERIES |
1,048,576-word x 4-bit Dynamic RAM |
Hitachi Semiconductor |
1299 |
HM514400AJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
1300 |
HM514400AJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
1301 |
HM514400AJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
1302 |
HM514400ALJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
1303 |
HM514400ALJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
1304 |
HM514400ALJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
1305 |
HM514400ALR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
1306 |
HM514400ALR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
1307 |
HM514400ALR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
1308 |
HM514400ALRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
1309 |
HM514400ALRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
1310 |
HM514400ALRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
1311 |
HM514400ALS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
1312 |
HM514400ALS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
1313 |
HM514400ALS-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
1314 |
HM514400ALT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
1315 |
HM514400ALT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
1316 |
HM514400ALT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
1317 |
HM514400ALTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
1318 |
HM514400ALTT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
1319 |
HM514400ALTT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
1320 |
HM514400ALTZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| | | |