| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
AWT6131 |
The AWT6131 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode ... |
Anadigics Inc |
| 1202 |
AWT6137 |
The AWT6137 CDMA/AMPS Power Amplifier is a high performance CDMA2000/1XRTT amplifier designed specifically for Cellular wireless ... |
Anadigics Inc |
| 1203 |
AWT6138 |
The AWT6138 PCS CDMA Power Amplifier is a high performance CDMA2000/1XRTT amplifier designed specifically for PCS wireless applications. |
Anadigics Inc |
| 1204 |
AWT6146 |
This quad band power amplifier module is designed to support dual, tri and quad band applications. |
Anadigics Inc |
| 1205 |
AWT6146 |
This quad band power amplifier module is designed to support dual, tri and quad band applications. |
Anadigics Inc |
| 1206 |
B3-28 |
Specifically Designed for VHF Broadband Linear Power Amplifier |
Acrian |
| 1207 |
BA119 |
Silicon capacitance diode in miniature design |
Siemens |
| 1208 |
BA120 |
Silicon capacitance diode in miniature design |
Siemens |
| 1209 |
BAR80 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 1210 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 1211 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 1212 |
BAR88-02V |
PIN Diodes - PIN-Diode for low current antenna switch designs |
Infineon |
| 1213 |
BAR89-02L |
PIN Diodes - PIN-Diode for high isolation, low loss antenna switch designs |
Infineon |
| 1214 |
BAS70-04 |
Dual Schottky Diode-Not recommended for new designs |
Zetex Semiconductors |
| 1215 |
BAS70-05 |
Dual Schottky Diode-Not recommended for new designs |
Zetex Semiconductors |
| 1216 |
BAS70-06 |
Dual Schottky Diode-Not recommended for new designs |
Zetex Semiconductors |
| 1217 |
BAY60 |
Silicon planar switching diode in miniature design |
Siemens |
| 1218 |
BAY63 |
Silicon planar logic diode in miniature design |
Siemens |
| 1219 |
BB811 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
| 1220 |
BB831 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
| 1221 |
BB833 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
Siemens |
| 1222 |
BB835 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
| 1223 |
BB837 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
| 1224 |
BBY31 |
Hyperabrupt varactor diode-Not recommended for new designs |
Zetex Semiconductors |
| 1225 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 1226 |
BBY40 |
Hyperabrupt varactor diode-Not recommended for new designs |
Zetex Semiconductors |
| 1227 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1228 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1229 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
| 1230 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
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