| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 1292 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
| 1293 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1294 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1295 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
| 1296 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1297 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 1298 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 1299 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 1300 |
BFY90 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 1301 |
BLV90SL |
UHF Power NPN Transistor designed for use in mobile radio transmitters in the 900 MHz band |
Philips |
| 1302 |
BN1A4M |
The BN1A4M is designed for use in medium speed switching circuit. |
NEC |
| 1303 |
BN1F4M |
The BN1F4M is designed for use in medium speed switching circuit. |
NEC |
| 1304 |
BQ34Z651 |
SBS 1.1 Compliant Gas Gauge with Impedance Track Technology design for low temperature environment |
Texas Instruments |
| 1305 |
BQ34Z651DBT |
SBS 1.1 Compliant Gas Gauge with Impedance Track Technology design for low temperature environment 44-TSSOP -40 to 85 |
Texas Instruments |
| 1306 |
BQ34Z651DBTR |
SBS 1.1 Compliant Gas Gauge with Impedance Track Technology design for low temperature environment 44-TSSOP -40 to 85 |
Texas Instruments |
| 1307 |
BSP452 |
Smart High Side Switches - new design, please use also |
Infineon |
| 1308 |
BSW11 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits |
AEG-TELEFUNKEN |
| 1309 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
| 1310 |
BU205 |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. |
USHA India LTD |
| 1311 |
BU208 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1312 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
| 1313 |
BU208D |
5A NPN silicon power transistor 1500V 60V designed for TV horizontal deflection, with integrated damper diode |
Motorola |
| 1314 |
BU209 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1315 |
BU209A |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1316 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 1317 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 1318 |
BU7150NUV |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| 1319 |
BU7150NUV-E2 |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| 1320 |
BUL49A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| | | |
