| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
MB252 |
Diode Rectifier Bridge Single 200V 25A 4-Pin MB-35 |
New Jersey Semiconductor |
| 1202 |
MB252 |
Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25A at Tc=55degC. |
Rectron Semiconductor |
| 1203 |
MB252 |
Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25A at Tc=55degC. |
Rectron Semiconductor |
| 1204 |
MB352 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
| 1205 |
MB352W |
Diode Rectifier Bridge Single 200V 35A 4-Pin Case MB-W |
New Jersey Semiconductor |
| 1206 |
MB502 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
| 1207 |
MB82 |
Diode Rectifier Bridge Single 200V 8A 4-Pin Case BR-6 |
New Jersey Semiconductor |
| 1208 |
MB8264 |
Diode Rectifier Bridge Single 200V 8A 4-Pin Case BR-6 |
New Jersey Semiconductor |
| 1209 |
MBR20200CT |
20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky |
Micro Commercial Components |
| 1210 |
MBRB20200CT |
20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky |
Micro Commercial Components |
| 1211 |
MCR206 |
Silicon controlled rectifier. Reverse blocking triode thyristor. Peak off-state and reverse voltage 200 V. RMS on-state current 0.5 A. |
Motorola |
| 1212 |
MCR3818-4 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 200 V. |
Motorola |
| 1213 |
MCR3918-4 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 200 V. |
Motorola |
| 1214 |
MCR3935-4 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 35 A RMS. Peak repetitive forward and reverse blocking voltage 200 V. |
Motorola |
| 1215 |
MCR6200B |
Thyristor. Silicon controlled rectifier. Repetitive peak off-state voltage 200 V. RMS on-state current 20 A. |
Motorola |
| 1216 |
MCR846-4 |
Silicon controlled rectifiers for low-power switching and control applications, Peak Reverse Blocking Voltage 200 |
Motorola |
| 1217 |
MDA1202 |
Single-Phase Full-Wave Bridge 12 Ampere 200V |
Motorola |
| 1218 |
MELFSMA4003 |
Surface mount silicon rectifier. Max reccurent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V |
Wing Shing Computer Components |
| 1219 |
MELFSMA4003 |
Surface mount silicon rectifier. Max reccurent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V |
Wing Shing Computer Components |
| 1220 |
MELFSMA5817 |
Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V |
Wing Shing Computer Components |
| 1221 |
MELFSMA5817 |
Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V |
Wing Shing Computer Components |
| 1222 |
MHW602 |
VHF RF power amplifier module 20W 12.5V |
Motorola |
| 1223 |
MHW720-1 |
UHF power amplifier module 20W - 400-440MHz |
Motorola |
| 1224 |
MHW720-2 |
UHF power amplifier module 20W - 440-470MHz |
Motorola |
| 1225 |
ML20 |
RF Power Module 20W 12.5V 68-88MHz |
TRW |
| 1226 |
MLED60 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 1227 |
MLED90 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 1228 |
MMBZ5250B |
Surface mount zener diode. Nominal zener voltage 20.0V, test current 6.2mA. |
Jinan Gude Electronic Device |
| 1229 |
MPX906 |
0 to 6 kPa (0 to 24 in. H2O) WATER VAPOR COMPATIBLE 20 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
| 1230 |
MPX906D |
0 to 6 kPa (0 to 24 in. H2O) WATER VAPOR COMPATIBLE 20 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
| | | |
