| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
NTE5986 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. |
NTE Electronics |
| 1292 |
NTE5987 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. |
NTE Electronics |
| 1293 |
NTE6007 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A. |
NTE Electronics |
| 1294 |
NTE6026 |
Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. |
NTE Electronics |
| 1295 |
NTE6027 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. |
NTE Electronics |
| 1296 |
NTE6054 |
Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 200V. Max forward current 70A. |
NTE Electronics |
| 1297 |
NTE6055 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 200V. Max forward current 70A. |
NTE Electronics |
| 1298 |
NTE6074 |
Stud mount recfifier. Cathode to case. Peak reverse voltage 200V. Max forward current 85A. |
NTE Electronics |
| 1299 |
NTE6075 |
Stud mount recfifier. Anode to case. Peak reverse voltage 200V. Max forward current 85A. |
NTE Electronics |
| 1300 |
NTE6206 |
Positive center tapped silicon rectifier, fast recovery. Peak repetitive reverse voltage 200V. Average forward current(per diode) 15A. |
NTE Electronics |
| 1301 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 1302 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 1303 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 1304 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1305 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1306 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 1307 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
| 1308 |
ONET4291VARGPR |
4.25 Gbps VCSEL Driver with Serial Interface 20-QFN -40 to 85 |
Texas Instruments |
| 1309 |
ONET4291VARGPT |
4.25 Gbps VCSEL Driver with Serial Interface 20-QFN -40 to 85 |
Texas Instruments |
| 1310 |
OPA2322-Q1 |
Automotive 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Op Amp 8-VSSOP -40 to 125 |
Texas Instruments |
| 1311 |
OPA2322A-Q1 |
Automotive 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Op Amp |
Texas Instruments |
| 1312 |
OPA2322AQDGKRQ1 |
Automotive 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Op Amp 8-VSSOP -40 to 125 |
Texas Instruments |
| 1313 |
P4KE200C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1314 |
P4KE200CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1315 |
P600A |
Diode 200V 6A 2-Pin Case P-6 |
New Jersey Semiconductor |
| 1316 |
P600D |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V |
Wing Shing Computer Components |
| 1317 |
P600D |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V |
Wing Shing Computer Components |
| 1318 |
P6KE200C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1319 |
P6KE200CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1320 |
P6SMB200 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 200V. 600W peak power, 3.0W steady state. |
Motorola |
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