No. |
Part Name |
Description |
Manufacturer |
12091 |
IP8155H |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12092 |
IP8155H-2 |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12093 |
IP8155H-2B |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12094 |
IP8155HB |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12095 |
IP8156 |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12096 |
IP8156-2 |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12097 |
IP8156-2B |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12098 |
IP8156B |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12099 |
IP8156H |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12100 |
IP8156H-2 |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12101 |
IP8156H-2B |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12102 |
IP8156HB |
2048-Bit Static MOS RAM with I/O Ports and Timer |
Advanced Micro Devices |
12103 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
12104 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
12105 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
12106 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
12107 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
12108 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
12109 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
12110 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
12111 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
12112 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
12113 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
12114 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
12115 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
12116 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
12117 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
12118 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
12119 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
12120 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| | | |