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Datasheets for STAT

Datasheets found :: 28015
Page: | 403 | 404 | 405 | 406 | 407 | 408 | 409 | 410 | 411 |
No. Part Name Description Manufacturer
12181 IRF732 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
12182 IRF733 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
12183 IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
12184 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
12185 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
12186 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
12187 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
12188 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
12189 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
12190 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
12191 IRFD112 Power MOSFET field effect power transistor. General Electric Solid State
12192 IRFD113 Power MOSFET field effect power transistor. General Electric Solid State
12193 IRFF110 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. General Electric Solid State
12194 IRFF111 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. General Electric Solid State
12195 IRFF112 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. General Electric Solid State
12196 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. General Electric Solid State
12197 IRFF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. General Electric Solid State
12198 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
12199 IRFF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. General Electric Solid State
12200 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. General Electric Solid State
12201 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State
12202 IRFF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. General Electric Solid State
12203 IRFF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. General Electric Solid State
12204 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. General Electric Solid State
12205 IRFF310 Power MOSFET field effect power transistor. Drain-source voltage 400 V. General Electric Solid State
12206 IRFF311 Power MOSFET field effect power transistor. Drain-source voltage 350 V. General Electric Solid State
12207 IRFF312 Power MOSFET field effect power transistor. Drain-source voltage 400 V. General Electric Solid State
12208 IRFF313 Power MOSFET field effect power transistor. Drain-source voltage 350 V. General Electric Solid State
12209 IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution Inc
12210 IS61C1024-12H 128K x 8 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution Inc


Datasheets found :: 28015
Page: | 403 | 404 | 405 | 406 | 407 | 408 | 409 | 410 | 411 |



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