| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications |
TOSHIBA |
| 122 |
2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications |
TOSHIBA |
| 123 |
2SC3326 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
| 124 |
2SC3327 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS |
TOSHIBA |
| 125 |
2SC3360 |
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 126 |
2SC3739 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 127 |
2SC4173 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 128 |
2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
| 129 |
2SC4754 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER AND SWITCHING REGULATOR APPLICATIONS |
TOSHIBA |
| 130 |
2SC5376 |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 131 |
2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 132 |
2SD2209 |
For power amplification and switching |
Panasonic |
| 133 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 134 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 135 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 136 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 137 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 138 |
3N158 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 139 |
94SC |
General Use Capacitor with Superior High Frequency Characteristics Suitable for use in Noise Limiters and Switching Power Supplies |
Vishay |
| 140 |
BAS70-07L4 |
SMD Diodes for clamping, rectifying, protection and switching applications |
Infineon |
| 141 |
BAT54ALT1 |
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 142 |
BAT54LT1 |
30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 143 |
BAT54M3 |
Silicon Hot−Carrier Detector and Switching Diode |
ON Semiconductor |
| 144 |
BAT54SLT1 |
30 VOLTS DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 145 |
BAT54T1 |
30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE |
Motorola |
| 146 |
BAT54WT1 |
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE |
Motorola |
| 147 |
BC140 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 148 |
BC140 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 149 |
BC140-10 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 150 |
BC140-16 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
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