| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 92 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 93 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 94 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 95 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 96 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 97 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 98 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 99 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 100 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 101 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 102 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 103 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 104 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 105 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 106 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 107 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 108 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 109 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 110 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 111 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 112 |
2N708 |
Silicon NPN Planar-Epitaxial HF and switching Transistor |
TELEFUNKEN |
| 113 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 114 |
2N915 |
Silicon NPN Planar HF and switching Transistor |
TELEFUNKEN |
| 115 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 116 |
2SA1330 |
HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 117 |
2SA1461 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 118 |
2SA1464 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 119 |
2SA1608 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 120 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
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