No. |
Part Name |
Description |
Manufacturer |
121 |
1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
122 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
123 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
124 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
125 |
1SS400T1 |
High Speed Switching Diode |
ON Semiconductor |
126 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
127 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
128 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
129 |
1SS92 |
(1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes |
ROHM |
130 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
131 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
132 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
133 |
2N1305 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
134 |
2N1307 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
135 |
2N1309 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
136 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
137 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
138 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
139 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
140 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
141 |
2N2193 |
Silicon NPN planar epitaxial transistor for high speed switchings and RF amplifiers |
AEG-TELEFUNKEN |
142 |
2N2218 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
143 |
2N2218A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
144 |
2N2219 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
145 |
2N2219A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
146 |
2N2221 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
147 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
148 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
149 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
150 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
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