| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SA1462-T1B |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 182 |
2SA1463 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 183 |
2SA1483 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed SwitcHing Applications |
TOSHIBA |
| 184 |
2SA1610 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 185 |
2SA1625 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 186 |
2SA1626 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 187 |
2SA1627 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 188 |
2SA1757 |
High Speed Switching Transistor |
ROHM |
| 189 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 190 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 191 |
2SA2071T100 |
PNP High speed switching Transistor |
ROHM |
| 192 |
2SA2088FRA |
PNP High speed switching Transistor (Corresponds to AEC-Q101) |
ROHM |
| 193 |
2SA2088FRAT106 |
PNP High speed switching Transistor (Corresponds to AEC-Q101) |
ROHM |
| 194 |
2SA2088T106 |
PNP High speed switching Transistor |
ROHM |
| 195 |
2SA2094 |
PNP High speed switching Transistor |
ROHM |
| 196 |
2SA2094TL |
PNP High speed switching Transistor |
ROHM |
| 197 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 198 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 199 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 200 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 201 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 202 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 203 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 204 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 205 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 206 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 207 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 208 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 209 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 210 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
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