No. |
Part Name |
Description |
Manufacturer |
121 |
1214GN-500 |
GaN Transistors |
Microsemi |
122 |
1214GN-550V |
GaN Transistors |
Microsemi |
123 |
1214GN-600VHE |
GaN Transistors |
Microsemi |
124 |
1214GN-750V |
GaN Transistors |
Microsemi |
125 |
1224-10 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
SGS Thomson Microelectronics |
126 |
1224-10 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
ST Microelectronics |
127 |
128-Z |
MOS Field Effect Power Transistors |
Unknow |
128 |
12N035 |
N-Channel Field Effect Transistor |
BayLinear |
129 |
12N035S |
N-channel field effect transistor |
BayLinear |
130 |
12N035T |
N-channel field effect transistor |
BayLinear |
131 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
132 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
133 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
134 |
13003BR |
POWER TRANSISTORS(1.5A,300-400V,40W) |
MOSPEC Semiconductor |
135 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
136 |
13003BR |
NPN SILICON TRANSISTOR |
Wing Shing Computer Components |
137 |
1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor |
GHz Technology |
138 |
132-Z |
MOS Field Effect Power Transistors |
Unknow |
139 |
133-Z |
MOS Field Effect Power Transistors |
Unknow |
140 |
1401 |
Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network |
Vishay |
141 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
142 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
143 |
1415-2 |
2 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
144 |
1415-7 |
7 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
145 |
1416-100 |
100 W, 50 V, 1400-1600 MHz common base transistor |
GHz Technology |
146 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
147 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
148 |
1416GN-120E |
GaN Transistors |
Microsemi |
149 |
1416GN-120EL |
GaN Transistors |
Microsemi |
150 |
1416GN-120EP |
GaN Transistors |
Microsemi |
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