No. |
Part Name |
Description |
Manufacturer |
181 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
182 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
183 |
153NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
184 |
154NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
185 |
155NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
186 |
156NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
187 |
15C02CH |
NPN EPITAXIAL SILICON TRANSISTOR |
SANYO |
188 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
189 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
190 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
191 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
192 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
193 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
194 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
195 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
196 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
197 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
198 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
199 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
200 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
201 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
202 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
203 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
204 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
205 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
206 |
1815 |
NPN general purpose transistor |
Philips |
207 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
208 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
209 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
210 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
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