No. |
Part Name |
Description |
Manufacturer |
121 |
BC556A |
0.625W General Purpose PNP Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 110 - 220 hFE |
Continental Device India Limited |
122 |
BC557A |
0.500W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110 - 220 hFE |
Continental Device India Limited |
123 |
BC558A |
0.500W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 110 - 220 hFE |
Continental Device India Limited |
124 |
BC846 |
0.250W General Purpose NPN SMD Transistor. 65V Vceo, 0.100A Ic, 110 - 450 hFE. Complementary BC856 |
Continental Device India Limited |
125 |
BC846A |
0.250W General Purpose NPN SMD Transistor. 65V Vceo, 0.100A Ic, 110 - 220 hFE. Complementary BC856A |
Continental Device India Limited |
126 |
BC847 |
0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 110 - 800 hFE. Complementary BC857 |
Continental Device India Limited |
127 |
BC847A |
0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 110 - 220 hFE. Complementary BC857A |
Continental Device India Limited |
128 |
BC848 |
0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 110 - 800 hFE. Complementary BC858 |
Continental Device India Limited |
129 |
BC848A |
0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 110 - 220 hFE. Complementary BC858A |
Continental Device India Limited |
130 |
BD142 |
Silicon N-P-N high power transistor. 50V, 117W. |
General Electric Solid State |
131 |
BD181 |
Silicon N-P-N high power transistor. 55V, 117W. |
General Electric Solid State |
132 |
BD182 |
Silicon N-P-N high power transistor. 70V, 117W. |
General Electric Solid State |
133 |
BD183 |
Silicon N-P-N high power transistor. 85V, 117W. |
General Electric Solid State |
134 |
BSO119N03S |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SO8, RDSon = 11.9mOhm, 11A, LL |
Infineon |
135 |
BSO130P03S |
OptiMOS MOSFET, -30V, SO-8, Ron =13mW, 11.3A, LL |
Infineon |
136 |
BSO4410 |
Low Voltage MOSFETs - OptiMOS Small Signal MOSFET, 30V, SO-8, RDSon = 13mOhm, 11A, LL |
Infineon |
137 |
BUK7M11-40H |
N-channel 40 V, 11.0 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
138 |
BUK7Y113-100E |
N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
139 |
BUK7Y113-100E |
N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
140 |
BUK9K12-60E |
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET |
Nexperia |
141 |
BUK9K12-60E |
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET |
NXP Semiconductors |
142 |
BUK9M11-40E |
N-channel 40 V, 11 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
143 |
BUK9M11-40H |
N-channel 40 V, 11.0 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
144 |
BUK9Y11-80E |
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56 |
Nexperia |
145 |
BUK9Y11-80E |
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56 |
NXP Semiconductors |
146 |
BUK9Y113-100E |
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 |
Nexperia |
147 |
BUK9Y113-100E |
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 |
NXP Semiconductors |
148 |
BZV39-C11 |
Low noise voltage regulator diode, 11V |
SESCOSEM |
149 |
BZW06-111 |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 111V |
Fagor |
150 |
BZW06-111B |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 111V |
Fagor |
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