No. |
Part Name |
Description |
Manufacturer |
31 |
1N3342 |
50 Watt Silicon Zener Diode, DO-5 case, 110V |
Transitron Electronic |
32 |
1N3342A |
50 Watt Silicon Zener Diode, DO-5 case, 110V tolerance ±10% |
Transitron Electronic |
33 |
1N3342AR |
50 Watt Silicon Zener Diode, DO-5 case, 110V reverse polarity tolerance ±10% |
Transitron Electronic |
34 |
1N3342B |
50 Watt Silicon Zener Diode, DO-5 case, 110V, tolerance ±5% |
Transitron Electronic |
35 |
1N3342BR |
50 Watt Silicon Zener Diode, DO-5 case, 110V reverse polarity, tolerance ±5% |
Transitron Electronic |
36 |
1N3342R |
50 Watt Silicon Zener Diode, DO-5 case, 110V reverse polarity |
Transitron Electronic |
37 |
1N4741 |
1 WATT, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
38 |
1N5241 |
500mW, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
39 |
1N941 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.088V |
Motorola |
40 |
1N941A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.181V |
Motorola |
41 |
1N941B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.239V |
Motorola |
42 |
1N942 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.044V |
Motorola |
43 |
1N942A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.090V |
Motorola |
44 |
1N942B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.120V |
Motorola |
45 |
1N943 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
46 |
1N943A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.036V |
Motorola |
47 |
1N943B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V |
Motorola |
48 |
1N944 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
49 |
1N944A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
50 |
1N944B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V |
Motorola |
51 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
52 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
53 |
1N945B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V |
Motorola |
54 |
1N962 |
400mW, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
55 |
1N962A |
11 V, 11.5 mA, silicon planar zener diode |
Honey Technology |
56 |
1N962B |
11 V, 11.5 mA, silicon planar zener diode |
Honey Technology |
57 |
2-2WI-1000S-16 |
1600 V, 1100 A, 8.8 kA water cooled A.C.switch |
POSEICO SPA |
58 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
59 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
60 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
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