No. |
Part Name |
Description |
Manufacturer |
121 |
2N4046 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
122 |
2N4047 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
123 |
2N404A |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
124 |
2N4347 |
Silicon HOMETAXIAL NPN transistor, high voltage amplifier |
SGS-ATES |
125 |
2N4348 |
HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS |
General Electric Solid State |
126 |
2N4348 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
127 |
2N4348 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
128 |
2N4416 |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
129 |
2N4416A |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
130 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
131 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
132 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
133 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
134 |
2N5157 |
3.5A power, high voltage, NPN silicon transistor 100W |
Motorola |
135 |
2N525 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
136 |
2N526 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
137 |
2N527 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
138 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
139 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
140 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
141 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
142 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
143 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
144 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
145 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
146 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
147 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
148 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
149 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
150 |
2N6655 |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
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